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Visible wavelength O/E
(Max NA = 0.2, 0.25)
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Visible wavelength O/E
(Max NA = 0.5)
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Visible wavelength O/E
(Hi-Sensitivity)
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NIR wavelength O/E
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*SPS-2_10KV/W & SPS-2_100KV/W
(Max Core = 1mm, Max NA = 0.5, 10KV/W or 100KV/W, DC to 100MHz or 15MHz)
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Features:
* Super high sensitivity: 10KV/W and 100KV/W
* A Silicon PIN photodetector with a ball lens and Graviton designed TIA circuitry
* Large detection area: max. core: φ1.0mm and max. NA 0.5
* Wide range of receivable wavelength: 400nm to 1,000nm
* Convertible Frequency Bandwidth: DC to 100MHz / DC to 15MHz
* Low output offset voltage: 0.5mV or less
* Compact: 103mm x 44mm x 21mm
* Lightweight: 130g
* Equips a silicon PIN Photodiode configured with unique lens system
* Reasonable price:JPY 290,000 for direct sales
(Excluded tax and shipping cost) |
[1] Specifications
[2] Lens system
[3] Spectral Sensitivity (by calculation)
[4] Step Response and Frequency Characteristics (Example)
[5] Responding characteristics of the PD in a range of convertible frequency bandwidth
[6] options
[2] Lens System
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SPS-2
Maximum Acceptable Diameter = 1.0mm
Maximum Acceptable NA = 0.5
Diameter of PD = 0.8mm
Optical Magnification = 0.8 |
[3] Spectral Sensitivity (by calculation)
SPS-2_10KV/W
Reference wavelength: 850nm
Maximum sensitivity: at 770nm
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Sensitivities vs wavelength
Sensitivity |
Wavelength |
2,400 V/W |
400nm |
4,400 V/W |
500nm |
6,800 V/W |
600nm |
9,000 V/W |
700nm |
10,200 V/W |
800nm |
8,700 V/W |
900nm |
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SPS-2_100KV/W
Reference wavelength: 850nm
Maximum sensitivity: at 770nm
Sensitivities vs wavelength
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Sensitivities vs wavelength
Sensitivity |
Wavelength |
24,300 V/W |
400nm |
43,900 V/W |
500nm |
68,000 V/W |
600nm |
89,500 V/W |
700nm |
101,800 V/W |
800nm |
87,300 V/W |
900nm |
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[4] Step Response and Frequency Characteristics (Example)
SPS-2_10KV/W
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Step Response of SPS-2_10KV/W
Rise time: 3.57ns, Overshoot : 3.06% |
Frequency Characteristics of SPS-2_10KV/W
-3dB (Electrical) Frequency : Approx. 100MHz |