-
-
Visible wavelength O/E
(Max NA = 0.2, 0.25)
-
Visible wavelength O/E
(Max NA = 0.5)
-
Visible wavelength O/E
(Hi-Sensitivity)
-
NIR wavelength O/E
-
-
*O/E Converter : SPA-4
(Max Core = 0.25mm, Max NA = 0.5, 300V/W@850nm, DC to 3GHz)
|
Features:
* Suitable for multiple wavelength
* A silicon PIN Photodiode of which frequency characteristics does not depend on wavelength
* Maximum NA: 0.5
* Wide range of receivable wavelength: 400nm to 950nm
* Wide range of Convertible Frequency Bandwidth: DC to 3.0GHz
* Sensitivity : 300V/W
* Low output offset voltage: 0.5mV or less
* Compact: 103mm x 44mm x 21mm
* Lightweight: 130g
* Equips a silicon PIN Photodiode configured with unique lens system
* Reasonable price:JPY 410,000 for direct sales
(Excluded tax and shipping cost) |
[1] Specifications
[2] Lens system
[3] Spectral Sensitivity (by calculation)
[4] Step Response and Frequency Characteristics (Example)
[5] Responding characteristics of the PD in a range of convertible frequency bandwidth
[6] options
[2] Lens System
|
SPA-4
Maximum Acceptable Diameter = 0.25mm
Maximum Acceptable NA = 0.5
Diameter of PD = 0.2mm
Optical Magnification = 0.8 |
[3] Spectral Sensitivity (by calculation)
SPA-4
Reference wavelength: 850nm
Maximum sensitivity: at 700nm
|
Sensitivities vs wavelength
Sensitivity |
Wavelength |
158 V/W |
400nm |
263 V/W |
500nm |
391 V/W |
600nm |
463 V/W |
700nm |
383 V/W |
800nm |
205 V/W |
900nm |
|
[4] Step Response and Frequency Characteristics (Example)
SPA-4
|
|
|
|
Step Response of SPA-4
Rise time: 143ps, Overshoot : 7.76% |
Frequency Characteristics of SPA-4
-3dB (Electrical) Frequency : Approx. 3.0GHz |