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Visible wavelength O/E
(Max NA = 0.2, 0.25)
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Visible wavelength O/E
(Max NA = 0.5)
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Visible wavelength O/E
(Hi-Sensitivity)
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NIR wavelength O/E
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*SPS-1_10KV/W & SPS-1_100KV/W
(Max Core = 0.8mm, Max NA = 0.2, 10KV/W or 100KV/W, DC to 100MHz or 15MHz)
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Features:
* Super high sensitivity: 10KV/W and 100KV/W
* A Silicon PIN photodetector with a ball lens and Graviton designed TIA circuitry
* Wide range of receivable wavelength: 320nm to 1,000nm
* Convertible Frequency Bandwidth: DC to 100MHz / DC to 15MHz
* Equips a silicon PIN Photodiode with a ball lens
* Low output offset voltage: 0.5mV or less
* Compact: 93mm x 44mm x 21mm
* Lightweight: 110g
* Reasonable price:JPY 230,000 for direct sales
(Excluded tax and shipping cost) |
[1] Specifications
[2] Spectral Sensitivity (by calculation)
[3] Step Response and Frequency Characteristics (Example)
[4] Responding characteristics of the PD in a range of convertible frequency bandwidth
[5] options
[2] Spectral Sensitivity (by calculation)
SPS-1_10KV/W
Reference wavelength: 850nm
Maximum sensitivity: at 770nm
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Sensitivities vs wavelength
Sensitivity |
Wavelength |
3,000 V/W |
400nm |
5,400 V/W |
500nm |
8,300 V/W |
600nm |
11,000 V/W |
700nm |
11,300 V/W |
800nm |
8,000 V/W |
900nm |
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SPS-1_100KV/W
Reference wavelength: 850nm
Maximum sensitivity: at 770nm
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Sensitivities vs wavelength
Sensitivity |
Wavelength |
29,800 V/W |
400nm |
53,900 V/W |
500nm |
83,400 V/W |
600nm |
109,800 V/W |
700nm |
113,300 V/W |
800nm |
79,500 V/W |
900nm |
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[3] Step Response and Frequency Characteristics (Example)
SPS-1_100KV/W
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Step Response of SPS-1_100KV/W
Rise time: 23.5ns, Overshoot : 2.90% |
Frequency Characteristics of SPS-1_100KV/W
-3dB (Electrical) Frequency : Approx. 15MHz |