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Visible wavelength O/E
(Max NA = 0.2, 0.25)
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Visible wavelength O/E
(Max NA = 0.5)
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Visible wavelength O/E
(Hi-Sensitivity)
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NIR wavelength O/E
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*O/E Converter : SPD-1_650nm and SPD-1_850nm
(Max Core = 0.8mm, Max NA = 0.2, 500V/W@658nm or 850nm, DC to 1.2GHz)
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Features:
* High sensitivity: 500V/W
* Wide range of receivable wavelength: 320nm to 1000nm
* Wide range of Convertible Frequency Bandwidth: DC to 1.2GHz
* Equips a silicon PIN Photodiode with a ball lens
* Low output offset voltage: 0.5mV or less
* Compact: 93mm x 44mm x 21mm
* Lightweight: 110g
* Reasonable price:JPY 230,000 for direct sales
(Excluded tax and shipping cost) |
[1] Specifications
[2] Spectral Sensitivity (by calculation)
[3] Step Response and Frequency Characteristics (Example)
[4] Responding characteristics of the PD in a range of convertible frequency bandwidth
[5] options
[2] Spectral Sensitivity (by calculation)
SPD-1_650nm
Reference wavelength: 658nm
Maximum sensitivity: at 770nm
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Sensitivities vs wavelength
Sensitivity |
Wavelength |
148 V/W |
400nm |
267 V/W |
500nm |
414 V/W |
600nm |
545 V/W |
700nm |
562 V/W |
800nm |
395 V/W |
900nm |
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SPD-1_850nm
Reference wavelength: 850nm
Maximum sensitivity: at 770nm
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Sensitivities vs wavelength
Sensitivity |
Wavelength |
149 V/W |
400nm |
269 V/W |
500nm |
417 V/W |
600nm |
549 V/W |
700nm |
566 V/W |
800nm |
398 V/W |
900nm |
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[3] Step Response and Frequency Characteristics (Example)
SPD-1_650nm
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Step Response of SPD-1_650nm
Rise time: 287.2ps, Overshoot : 0.43% |
Frequency Characteristics of SPD-1_650nm
-3dB (Electrical) Frequency : Approx. 1.2GHz |
SPD-1_850nm
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Step Response of SPD-1_850nm
Rise time: 293ps, Overshoot : 0.81% |
Frequency Characteristics of SPD-1_850nm
-3dB (Electrical) Frequency : Approx. 1.2GHz |